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SUM110P04-04L
www.vishay.com
P-Channel 40 V (D-S) 175 °C MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.0042 at V GS = -10 V
-40
0.0062 at V GS = -4.5 V
TO-263
I D (A) d
-110
-110
FEATURES
? TrenchFET ? Power MOSFET
? Low thermal resistance
? Material categorization: ?
For definitions of compliance please see
www.vishay.com/doc?99912
S
G
S
Top View
G
D
P-Channel MOSFET
D
Ordering Information: ?
SUM110P04-04L-E3 (Lead (Pb)-free)
?
?
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
-40
± 20
UNIT
V
375
Continuous Drain Current (T J = 175 °C) d
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy a
Power Dissipation
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 125 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C b
I D
I DM
I AS
E AS
P D
T J , T stg
-110
-110
-240
-75
281
c
3.75
-55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient PCB Mount b
Junction-to-Case
SYMBOL
R thJA
R thJC
LIMIT
40
0.4
UNIT
°C/W
Notes
a. Duty cycle ? 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
S13-2478-Rev. D, 09-Dec-13
1
Document Number: 72437
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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